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| Local high temperature annealing can be performed with localized heaters driven by most of the solar cell. This repairs some kinds of displacement damage. Horizontal thermal conductivity is poor on server-sats. Assuming zero albedo perfect black body surfaces on both sides (the worst case, hardest to heat), the black body radiation power is $ P=2 A times 5.67E-12 times T^4 $ where A is the area in square centimeters, P is the power in watts, and T is the temperature in Kelvin. Assuming a power of 4 watts, the heatable areas at various temperatures are : | Local high temperature annealing can be performed with localized heaters driven by most of the solar cell. This repairs some kinds of displacement damage. Horizontal thermal conductivity is poor on server-sats. Assuming zero albedo perfect black body surfaces on both sides (the worst case, hardest to heat), the black body radiation power is $ P=2 A \times 5.67E-12 \times T^4 $ where A is the area in square centimeters, P is the power in watts, and T is the temperature in Kelvin. Assuming a power of 4 watts, the heatable areas at various temperatures are : |
Radiation Damage
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Annealing
Local high temperature annealing can be performed with localized heaters driven by most of the solar cell. This repairs some kinds of displacement damage. Horizontal thermal conductivity is poor on server-sats. Assuming zero albedo perfect black body surfaces on both sides (the worst case, hardest to heat), the black body radiation power is P=2 A \times 5.67E-12 \times T^4 where A is the area in square centimeters, P is the power in watts, and T is the temperature in Kelvin. Assuming a power of 4 watts, the heatable areas at various temperatures are :
Temperature |
Area |
150C |
11.02 cm2 |
200C |
7.04 cm2 |
250C |
4.71 cm2 |
300C |
3.27 cm2 |
These temperatures should be adequate to anneal damage in seconds. Addressing individual chips and small sections of the solar cell one by one, a full anneal of a server-sat should take less than an hour.
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